Dielectric properties of polyoxides for EEPROMFERNHOLZ, G; BENZ, H.-T.Microelectronics journal. 1993, Vol 24, Num 4, pp 435-444, issn 0959-8324Conference Paper

ELECTRICAL AND STRUCTURAL PROPERTIES OF P-N JUNCTIONS IN CW LASER ANNEALED SILICONMAIER M; BIMBERG D; FERNHOLZ G et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 8; PP. 5904-5907; BIBL. 9 REF.Article

Ion implanted Si MESFET's with high cutoff frequencyFERNHOLZ, G; BENEKING, H.I.E.E.E. transactions on electron devices. 1983, Vol 30, Num 7, pp 837-840, issn 0018-9383Article

Annealing behaviour of extremely low energy beryllium implantation into Ga_0.47In_0.53AsFERNHOLZ, G; BREUER, U; BENEKING, H et al.Thin solid films. 1988, Vol 156, Num 2, pp 239-242, issn 0040-6090Article

Ion-implanted Si MESFET ring oscillatorsGRUHLE, A; FERNHOLZ, G; BENEKING, H et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 4, pp 872-876, issn 0018-9383Article

Enhanced Schottky barrier heights on n-type Ga_0.47In_0.53As by Be implantationFERNHOLZ, G; WESTPHALEN, R; LANGE, W et al.Electronics Letters. 1987, Vol 23, Num 14, pp 722-723, issn 0013-5194Article

Erfahrungen mit den dynamischen Simulatoren DIVA, gPROMS und ABACUSS = Experiences gained with the dynamic simulators DIVA, gPROMS and ABACUSSKREUL, L. U; FERNHOLZ, G; GORAK, A et al.Chemieingenieurtechnik. 1997, Vol 69, Num 5, pp 650-653, issn 0009-286XConference Paper